IRLR8503PbF
Electrical Characteristics
Parameter
Drain-to-Source
Breakdown Voltage*
Static Drain-Source
on Resistance*
Gate Threshold Voltage*
Drain-Source Leakage Current
Symbol
V (BR)DSS
R DS (on)
V GS (th)
I DSS
Min
30
1.0
Typ
11
13
Max
16
18
30*
Units
V
m ?
V
μA
Conditions
V GS = 0V, I D = 250μA
V GS = 10V, I D =15A ?
V GS = 4.5V, I D =15A
V DS = V GS , I D = 250μA
V DS = 24V, V GS = 0
150
V DS = 24V, V GS = 0,
Tj = 100°C
Gate-Source Leakage Current*
I GSS
±100
nA
V GS = ±12V
Total Gate Charge Control FET*
Total Gate Charge Sync FET*
Pre-Vth
Gate-Source Charge
Post-Vth
Gate-Source Charge
Gate to Drain Charge
Switch Charge* (Q gs2 + Q gd )
Output Charge*
Gate Resistance
Turn-on Delay Time
Q g
Q g
Q gs1
Q gs2
Q gd
Q SW
Q oss
R g
t d (on)
15
13
3.7
1.3
4.1
5.4
23
1.7
10
20
17
8
29.5
nC
?
V GS = 5V, I D = 15A, V DS =16V,
V GS = 5V, V DS < 100mV
V DS = 16V, I D = 15A
V DS = 16V, V GS = 0
V DD = 16V, I D = 15A
Drain Voltage Rise Time
Turn-off Delay Time
Drain Voltage Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
tr v
t d (off)
tf v
C iss
C oss
C rss
18
11
3
1650
650
58
ns
pF
V GS = 5V
Clamped Inductive Load
See test diagram Fig 14.
V DS = 25V, V GS = 0
Source-Drain Rating & Characteristics
Parameter
Symbol
Min
Typ
Max
Units
Conditions
Diode Forward Voltage*
Reverse Recovery Charge ?
V SD
Q rr
76
1.0
V
nC
I S = 15A ? , V GS = 0V
di/dt = 700A/μs
V DS = 16V, V GS = 0V, I S = 15A
Reverse Recovery Charge
(with Parallel Schottky) ?
Q rr(s)
67
di/dt = 700A/μs
(with 10BQ040)
V DS = 16V, V GS = 0V, I S = 15A
Notes:
? Repetitive rating; pulse width limited by max. junction temperature.
? Pulse width ≤ 300 μs; duty cycle ≤ 2%.
? When mounted on 1 inch square copper board, t < 10 sec.
? Typ = measured - Q oss
? Calculated continuous current based on maximum allowable
Junction temperature; switching and other losses will
decrease RMS current capability; package limitation
*
2
Devices are 100% tested to these parameters.
current = 20A.
www.irf.com
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